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Temperature Dependence of Output Voltage Generated by Interaction of Threshold Voltage and Mobility of an NMOS Transistor

Igor Filanovsky, A. Allam, Su Tarn Lim
Analog Integrated Circuits and Signal processing, 227, pp. 229-238, 2001

Mutual compensation of mobility and threshold voltage temperature variations may result in a zero temperature coefficient (ZTC) bias point of an NMOS transistor. The conditions under which this effect occurs, stability of this bias point, and the temperature dependence of the output voltage for a diode-connected transistor operating in the vicinity of ZTC point are investigated in this paper. Some possible applications of this effect include temperature sensors with linear dependence of voltage versus temperature, and voltage and current reference circuits. The theory is verified experimentally investigating the temperature behavior of an NMOS transistor realized in 0.35 um CMOS process. The design and simulation results of simple current and voltage reference circuits for implementation in 0.18 um CMOS technology are given.

CONTACTS: Igor Filanovsky, Ahmed Allam
SUBJECTS: RF Circuits and Systems
TYPE: Journal Publication
PUBLISHED: 2001

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