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A Silica Based Integrated Optic Microwave Power Sensor

A.J.P. Hnatiw, R.I. MacDonald, P.S. Apt, W.D. MacDonald
Proceedings of the International Conference on Applications of Photonics Technology 1996 (ICAPT '96), Montreal, Quebec, July 29-August 1, 1996

A novel silica based integrated optic microwave power sensor measuring 200 um by 3 mm, is described. The sensor is designed to sense microwave power at a frequency of 2.45 GHz using Optical Signals from a 1550 nm laser. Since the sensor is mainly fabricated from low loss dielectric materials and because of its small size, the microwave fields are minimally perturbed, resulting in a nonintrusive power measurement. Further, due to its small size and nonintrusive nature, the sensor is ideally suited for applications involving the microwave heating, where more that 1kW of continuous microwave power is common. Measurements involving high power microwaves, such as microwave heating, where a power profile of the loaded and unloaded microwave cavity is desired, can be performed because of its high spacial resolution and minimally perturbing nature. Conventional mental antenna based sensors can cause reflections, arcing and inaccurate measurements. Using a dielectric microwave power sensor and an optical signal, which is thermally modulated by microwave power, negates the possibility of arcing, etc. Furthermore, since the sensor is fabricated using conventional semiconductor processes, it can be mass-produced economically. We will report the sensitivity, response time and accuracy of a prototype sensor.

CONTACTS: Alan Hnatiw, Ian MacDonald
SUBJECTS: Instrumentation
TYPE: Conference Publication
PUBLISHED: 1996

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