Low Power Interference-Robust UWB Low Noise Amplifier in 0.18-um CMOS TechnologyAhmed A. Youssef and James W. Haslett
IEEE International Midwest Symposium on Circuits and Systems (MWSCAS 2007), Montreal, QC, Canada, August 2007
This paper proposes a very low power Low Noise Amplifier (LNA) operating from 3.1 GHz to 8 GHz for OFDM-UWB systems. The LNA is intended to cover groups 1 and 3 while filtering out group 2, whose spectrum is shared with WLAN signals representing troublesome interference. By utilizing both nMOS and pMOS transistors to boost the transconductance, the LNA draws only 1.5 mA from a 1.5 V supply. The LNA IC has been realized in 0.18-um CMOS technology from TSMC.
CONTACTS: Ahmed Youssef, Jim Haslett
SUBJECTS: RF Circuits and Systems
TYPE: Conference Publication
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