Noise Figure Optimization of Wide-Band Inductively-Degenerated CMOS LNAsLeonid Belostotski and James W. Haslett
IEEE International Midwest Symposium on Circuits and Systems, Montreal, QC, Canada, pp. 1002-1005, August 5-8, 2007
This paper presents the design and measurement results of a wide-band inductively-degenerated 0.18-um CMOS LNA targeted for the Square Kilometer Array (SKA) radio telescope. A noise figure optimization procedure is discussed that allows selection of an optimum power consumption resulting in the lowest noise figure given the required bandwidth. The noise optimization procedure accounts for the parasitic resistances of both the transistorŐs gate fingers and the gate inductor. Measured results of a single-stage 700 MHz-1400 MHz LNA are discussed. The LNA, designed in 0.18-um CMOS, achieves noise figures better than 0.57 dB, gain (S) of at least 15 dB, input return loss of greater than 16 dB, output P1dB of 6 dBm, and output IP3 of 14.5 dBm while consuming 50mW of power from a 1.5-V supply.
CONTACTS: Leo Belostotski, Jim Haslett
SUBJECTS: RF Circuits and Systems
TYPE: Conference Publication
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