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Characterization of the Microwave PIN Diode for High Speed Data Modulation

Abbas Mohammadi, Surinder Kumar, Hugh C. Wood and David M. Klymyshyn
International Semiconductor Device Research Symposium (ISDRS '97), Charlottesville, VA, December 11, 1997

An accurate model to characterize a PIN diode as a variable resistor driven by high speed digital data and RF pump signals is presented. The model extracts the electron density function resulting from these signal drives. This is used to obtain a closed form of expression for the PIN diode resistance. A high speed reflection pulse amplitude modulator which is an essential block for implementing more complex digital modulators, is also examined using this model.

CONTACTS: Abbas Mohammadi, Surinder Kumar, David Klymyshyn
SUBJECTS: RF Circuits and Systems
TYPE: Conference Publication
PUBLISHED: 1997

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