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Phase Noise Performance Comparison Between LIGA-MEMS and ON-CHIP CMOS Capacitors for a VCO Application

Leonard Fang, David Klymyshyn, Anh Dinh, Darcy Haluzan, Sven Achenbach
Canadian Conference on Electrical and Computer Engineering 2005, (CCECE '05), Saskatoon, SK, pp. 425-428, May 2005

An integrated voltage-controlled oscillator using TSMC 0.18 um CMOS technology is presented to demonstrate and compare the phase noise performance between the VCO using a new type of MEMS variable capacitor and that using conventional CMOS varactor, which is built on-chip together with the CMOS VCO. A representative MEMS variable capacitor, fabricated using the LIGA process, has a nominal capacitance of 1.05 pF and exhibits a Q factor of 40.9 at 2.7 GHz. The simulation results show that with this LIGA-MEMS capacitor, a 4.3 dB of phase noise improvement at 300 kHz offset from the carrier is achieved when the VCO operates at 2.7 GHz.

CONTACTS: Leonard Fang, David Klymyshyn, Anh Dinh, Darcy Haluzan
SUBJECTS: MEMs
TYPE: Conference Publication
PUBLISHED: 2005

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